TechnologiesElectronics

Hann's diode: the principle of operation and application

The Gann diode is a semiconductor that is capable of generating oscillations at different frequencies. In electronics stores, devices are sold in different types. Also worth noting that they differ in size. The main parameters of the modifications include current conductivity, voltage, maximum frequency and resistance.

The device of the Gunn diode is similar to a conventional semiconductor. The standard model consists of a thin layer of arsenide. Also inside the device there is a special gallium medium and contacts. Doping impurities and electrodes are located under the layer of arsenide. The technology of manufacturing the Gunn diode at different plants may differ.

How does he work?

As stated earlier, there are different types of diodes. The principle of operation of devices is based on the transformation of oscillations. This is due to a change in frequency in the circuit. Initially, the voltage is applied to the contacts, where a layer of arsenide is excited. Then electrodes are directly used. The strength of the magnetic field increases. Optical contacts in the system are necessary to increase the resistance. The oscillation generation process is carried out in alloying impurities. The increase in the saturation rate in this case depends on the conductivity of the electrodes.

Application of Gunn diodes

Diodes are actively used in generators of different frequency. Also worth noting that they are often installed in the controllers. They can also be found in transformers. However, the devices are not suitable for all types of modifications. In order to understand this in more detail, we need to consider the types of diodes.

Types of modifications

To date, isolated hull and open-body devices. They differ in conductivity, as well as in security. It is also worth noting that the separation of modifications is carried out along the length. There are diodes of 20, 50 and 100 microns.

Casing diodes

The Hannah solid-state semiconductor diode (shown below) is suitable for generators of different frequencies. If you believe the experts, the modifications have good conductivity. The devices can be connected via contact modulators. The manufacturing process of Gunn diode in different factories may differ. In some cases, channel adapters are used.

It is also worth noting that the body diodes have good protection. Their working humidity parameter is about 55%. The minimum permissible temperature is -30 degrees. Models are also well suited for capacitor transformers. Due to the presented diodes, a high speed of the electrodes is achieved.

Avalanche open devices

Gunless avalanche avalanche diodes are used, as a rule, for the operation of controllers. The conduction parameter in many models starts from 30 microns. This ensures a high speed of the electrodes. If we consider the serial Gunn diode, the design is similar to a linear semiconductor. At a voltage of 12 V, the overload rating of the models equals at least 55 A.

However, in this case, much depends on the size of the modification. It is also worth considering the type of transistor that is used to connect to the controller. In many cases, devices can be connected through a distributor. In this situation, the resistance is approximately 2 ohms. The saturation rate depends on the amount of dopant impurities. It should be noted that the modifications are not suitable for contactless controllers. The main problem here lies in the low saturation speed.

Devices at 20 μm

This diode is very popular with Gunn. The principle of his work is based on the generation of oscillations. Models are great for drive type controllers. It is also worth noting that the modifications differ in good negative resistance at low thermal losses. However, they have certain drawbacks.

First of all, experts note a low overload factor at a voltage of 10 V. Models do not have the best security. The operating humidity of the diodes is 20 μm equal to 40%. The alloying impurities in this case slowly interact with the cathode. The speed of the electrodes depends not only on the conductivity, but also on the resistance.

Modifications of 50 μm

The Gunn diode (designation 50 μm is indicated on the housing) can be used for powerful generators. Modifications can only be connected via transient capacitors. If we consider a Gunn 3A716I diode, then the allowable voltage parameter is 15 V. The security of the model in this case depends on the type of blocker that is used in the equipment. Conductivity is maintained at an average of 40 microns on average. Some experts say that the presented semiconductors have not better conductivity.

However, it should be noted that the oscillation generation process takes place very quickly. This ensures a high level of saturation of arsenide. The gallium medium remains active even when the temperature rises. Separately, it is important to note that modifications of 50 μm are suitable for code controllers. Transit blocks are used for connection. In this case, conductivity is provided at a level of 45 microns. In this case, the resistance of the diodes is at most 2 ohms. They provide excellent security, the speed of the electrodes is maintained at a high level. If we talk about the shortcomings of such systems, it is important to note that they have a low saturation rate. This is largely due to the presence of impurities in the gallium medium.

It can also be mentioned that the contacts are often overheated, the oscillation generation process can be greatly slowed down. To solve the presented problem, transient filters can be used. First of all, they increase the negative resistance. They also have a good effect on the conductivity of the electrodes.

Difference between devices at 100 μm

Among closed models, this Gunn diode is often found. The operation of the modifications is based on the transformation of oscillations. For this, the lower layer of arsenide is activated. If we consider a conventional Gunn diode, the construction of it is similar to a linear semiconductor. Optical contacts play the role of conductors.

If we talk about the use of modifications, it is worth noting that diodes at 100 μm are not bad for code controllers. They are able to work at a voltage of 13 V. At this time, the current overload indicator should not fall below 40 A. The negative resistance in the system depends only on the speed of oscillation generation. It is also worth noting that diodes of 100 μm are often used for drive controllers.

Modifications for 10 GHz generators

Diodes of closed type are suitable for generators at 10 GHz. The length of the modification does not matter. Direct connection of the device is carried out through a conventional transient capacitor. Also suitable are field analogues, which have a high negative resistance parameter. Modifications for 10 GHz generators should operate at a voltage not lower than 10 V.

Also worth noting is that you can not connect the modifications via a conventional wire contactor. First of all, it reduces the conductivity of the device. This reduces the speed of the electrodes. Optical contactors for these purposes are excellent. They absolutely do not affect the coefficient of thermal conductivity. On the average, the negative resistance is maintained at 4 ohms.

Devices for 15 GHz generators

For generators at 15 GHz it is permitted to use diodes of a closed type only. As a rule, connection of modifications is carried out through cantilever capacitors with conductivity at the level of 4 microns. In some cases, conventional contactors are used. However, they must operate at a voltage of 10 V. With the security of the generators everything is fine. Optical contacts of diodes are excited fairly quickly. Experts also point to the high speed of the electrodes. This is largely due to the high conductivity. The saturation speed is controlled by the connector. If to speak about minuses, then it is necessary to take into account the small threshold of operating temperature. Permissible humidity of the medium is at the level of 55%.

The charge layer of the modification depends on the speed of the oscillation generation process. In some cases, diodes are connected via open transistors. In this case, the grid filters are used. As a result, the conductivity at the limit is equal to 40 microns. At a voltage of 12 V, the generator with diodes should give an overload of at least 5 A. When the speed of the electrodes decreases, the contactor changes. Also, problems can be in the transistor. Modifications of low conductivity are not capable of maintaining a constant impulse in the system.

Diodes for generators at 20 GHz

Diodes of open and closed type are used for generators at 20 GHz. In this case, an important role is played by the selected capacitor. As a rule, modifications with an output voltage of 30 V are used. However, it is worth remembering the negative resistance. If this parameter is underestimated, the speed of the electrodes decreases significantly. There are also problems with conductivity and thermal losses.

The overload parameter of the generators does not generally drop below the 5 N. The modifications have very good protection. In this case, the saturation of the doping impurities depends on the resistance at the output. For connection through a connector, drive adapters are used. In many cases, transceivers are used. To maintain a stable voltage stabilizers are installed. However, it is important to note that diodes lose significantly in conductivity when using commutation transceivers.

Models for operational resonators

Operational resonators need a rapid oscillation generation. Diodes of this type are well suited for this purpose. When installing a modification, it is first of all to take a look at the negative resistance. Also, do not forget about the conductivity of optical contacts, on which the speed of the electrodes depends. To increase the capacity of the device, it is recommended to use capacitive transceivers.

The voltage parameter in this situation at the limit will reach 30 V. Overloading the diode depends solely on the conductivity of the capacitor. Also worth noting is that when installing the modification it is worth using filters on the plates. First of all, they solve the problems of the security of the gallium environment. They also have a positive effect on the alloying impurities.

Diodes in pulsed resonators

Specifically, diodes of 20 and 50 μm are suitable for pulsed resonators. When connecting devices, code adapters are used. In some cases, connectors are used. The conductivity of the modifications depends on the rate of saturation and the level of negative resistance. If we consider the circuit with a drive controller, its voltage at the limit is equal to 40 V. The security is maintained at a high level. The disadvantage of such a system is low conductivity at a low frequency, and the overload is only 4 A.

Saturation rate is maintained at a high level, however this is achieved by significant heat losses. If we consider a circuit with FETs, then two filters are used. Directly the Gunn diode is suitable for 20 μm. It is necessary to install it behind the adapter. In this case, the voltage at the limit is approximately 10 V with a negative resistance of 4 Ω.

Application of devices in the drive controllers

A Gunn diode for 100 μm is suitable for drive controllers. Connection of modifications is carried out, as a rule, through triodes. These devices have good conductivity and are able to work with grid filters. They are not afraid of heat losses, and the voltage is maintained at 30 V. The models provide good protection and high speed of the electrodes. Some experts also actively use diodes in circuits with comparators, which are connected through two adapters. Regulators for such systems are suitable for linear type.

Models for frequency controllers

In order to ensure the normal operation of frequency controllers, one can use a Gann diode only of the closed type. The length of the modification can be 20 or 50 μm. In this case, much depends on the conductivity of the controller itself.

If we consider the circuit in a field capacitor, then there is a negative resistance at the peak of 4 ohms. At a voltage of 10 V, the device works stably and shows a high speed of electrons. Saturation depends on the security of the transient contacts. Also, when connecting diodes, it is important to pay attention to the conductivity inside the circuit between the rails.

Diodes in latitudinal controllers

Models of 50 μm are suitable for latitudinal controllers. You can connect devices through the transceiver. However, the adapters are selected for two contacts. In such a situation, conductivity of 55 microns is provided at a voltage of 12 V. When connecting a modification, it is important to estimate the negative resistance. Also attention is paid to the contactor on the winding. The maximum allowable circuit overload is 3 Nu. To increase the protection of the modification, only relay filters are used. When the controller is turned on, the output voltage threshold should not exceed 15 V.

Similar articles

 

 

 

 

Trending Now

 

 

 

 

Newest

Copyright © 2018 en.atomiyme.com. Theme powered by WordPress.